亚洲熟女午夜福利在线观看,无遮挡国产在线视频

CHEMICAL MECHANICAL POLISHING SLURRY
Product matrix with full coverage

Chemical mechanical polishing is a key process for achieving global and local planarization of wafers in the IC manufacturing process, in which Chemical mechanical polishing (CMP) slurries are the main processing chemicals used. According to the objects of polishing, ANJI’s chemical mechanical polishing slurries include copper polishing slurries, barrier polishing slurries, dielectric (silica-based and ceria-based abrasive) polishing slurries, tungsten polishing slurries, polishing slurries for various substrates, and polishing slurries for emerging materials and applications. Currently, ANJI’s copper and barrier polishing slurries can meet the needs of chip manufacturers in China and has achieved breakthroughs in overseas markets. Other series of polishing slurries have been supplied to numerous chip manufacturers in China and abroad, and their production scale will be adapted to the customer demand.

Cu and Cu Barrier Polishing Slurries

Applicable for the removal and planarization of copper interconnection in the IC manufacturing processes. Both Cu and Barrier polishing slurries have been mass-produced and used in the production lines of logic chips, memory chips, etc. Continuous development and demonstration are carried out for the products in the next-generation technology nodes.

Tungsten Polishing Slurries

Applicable for the removal and planarization of tungsten metals in the IC manufacturing processes. At present, the application scope and market share of tungsten CMP slurry continue to rise in the production of memory and logic chips. ANJI closely follows the advanced manufacturing processes of industry-leading customers, makes advance layouts of the technical platform, and accumulates technical capabilities in advance. Many types of tungsten polishing slurries have passed qualification in advanced manufacturing processes and successfully achieved mass production.

Dielectric polishing Slurries

Applicable for the removal and planarization of dielectric materials such as silicon dioxide and silicon nitride in the IC manufacturing processes. ANJI's products in this category have has been mass-produced and used in in the production lines of logic chips, memory chips, and other processes.

Ceria-based Dielectric Polishing Slurries

Applicable for shallow trench isolation (STI) and other polishing techniques that require high removal of silicon dioxide. ANJI’s ceria-based slurries offer advantages including high silicon dioxide removal rates, high selectivity and good planarization efficiency. Anji Ceria slurries have been mass-produced and used in the production lines of logic chips, memory chips, etc. Furthermore, various new products can be developed according to customer requirements.

Si Substrate Polishing Slurries

Applicable for the polishing of silicon substrate, including silicon stock polishing slurries and fine polishing slurries. ANJI closely follows the trend of the development of domestic silicon wafer manufacturer and the material autonomy and controllable capability. With a comprehensive understanding of the customers' requirements, the customized silicon polishing slurries have been successfully released at the client sites.

Polishing Slurries for new materials and new technology

Leveraging our advanced chemical mechanical polishing slurry technology platform, we have closely collaborated with customer process requirements to develop polishing slurries tailored for emerging technologies and processes. Specifically, these includes the development of through-silicon-via (TSV) polishing slurries and hybrid bonding polishing slurries utilized in advanced packaging technologies, as well as slurries designed for innovative materials such as polymers and carbon. Numerous products have successfully entered mass production and are now being supplied to the market.

FUNCTIONAL ELECTRONIC WET CHEMICALS
Multi-product line layout of leading technology nodes

Functional electronic wet chemicals are formulated wet electronic chemicals that achieve specific functions in the IC manufacturing processes. Currently, ANJI offers post-etch residue remover (PERR), photoresist stripper, post CMP cleaning solution and other etchant products. PERR, photoresist stripper, and post CMP cleaning solution have been widely applied in volume production of 8 and 12 inch wafers in the IC manufacturing processes.

Post Etch Residue Remover (PERR)

Al PERR

Applicable for metal, via and pad post-etch residue removal of IC AlCu interconnect processes with excellent post-etch residue removal capability, customer cost benefit and mass-produced in both 8- and 12-inch logic and memory chips.

Cu PERR

Applicable for IC BEOL Cu post-etch clean in 90-40nm logic, 3D NAND, DRAM, CIS products and TSV Cu reveal process with excellent residue removal capability, low defectivity, and customer cost benefit.

TiN Hard Mask (HM) Cu PERR

Applicable for IC BEOL TiN hard mask Cu post-etch residue removal of 28 nm and beyond technology with high TiN/Cu selectivity and excellent post-etch residue removal capability. Mass-produced.

Etchant

Selective Etchant

Applicable for selective etching on SiGe, Si, SiN, polysilicon, etc. to meet special process requirements in IC different technology nodes.

Post CMP Clean Solution

Cu Post CMP Cleaner

Offering both acid-based and alkaline-based Cu Post-CMP cleaners with excellent post CMP residue removal capability and substrate protection to meet the process requirements in mature technical nodes of 90 - 40nm and advanced technical nodes of 28nm and beyond.

Photoresist Stripper

Photoresist stripper

Applicable for the removal of thick-film photoresist in advanced packaging fields such as wafer-level packaging and MEMS; Capable of removing photoresist of more than 100 μm ; Customer cost benefit; Mass production in processes such as 8- and 12-inch wafer-level packaging, MEMS, TSV, etc.

Cured PI remover

Applicable for cured polyimide removal in advanced packaging technology.

Deflux remover

Applicable for flux removal after SnAg reflow process in advanced packaging technology.

VIRGIN MAKEUP SOLUTION (VMS) AND ADDITIVES
Enhancement of strategic supply of the high-end ECP (Electro-chemical Plating) product series

ECP is a process in which metal ions in the electrolyte are deposited on the cathode surface through electrochemical means. VMS (virgin makeup solution) and additives are the key processing materials in the process. Currently, ANJI offers a series of Copper, Nickel, Nickel-iron, and Tin-silver ECP products, providing solutions for integrated circuit front-end manufacturing and advanced packaging technology, such as through-silicon-via (TSV), bumping, and redistribution line (RDL) processes. They are widely applied in 6-, 8-, and 12-inch processes.

Copper ECP VMS and additives

Applicable for the IC manufacturing Cu dual damascene front-end processes and TSV, bumping and RDL assembly processes, providing high-purity copper electroplating solutions. Both VMS and additives have been mass-produced in advanced packaging and under qualification stage in Cu dual damascene and TSV processes.

Nickel Plating Solution

Applicable for the bumping process of assembly as a barrier between Cu and SnAg. The product has been mass-produced, providing high-purity, ductile, and low-stress solutions.

Nickel-Iron Plating Solution

Applicable for advanced packaging and MEMS Hall Element technology. The product has been mass-produced.

Tin-Silver Plating Solution

Applicable for the bumping process of advanced packaging technology, providing normal-speed and high-speed plating solutions.

SOLUTIONS